Atom Probe Tomography: Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography (Adv. Mater. Interfaces 21/2017). Issue 21 (21st November 2017)

• Record Type: Journal Article
• Authors: Dyck, Ondrej; Leonard, Donovan N.; Edge, Lisa F.; Jackson, Clayton A.; Pritchett, Emily J.; Deelman, Peter W.; Poplawsky, Jonathan D.
• Is Part Of: Advanced materials interfaces. Volume 4:Issue 21(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-11-21
• Subjects: atom probe tomography -- interfacial measurements -- scanning transmission electron microscopy -- Si/SiGe -- z‐redistribution; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201770110
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract : Jonathan D. Poplawsky and co‐workers demonstrate a scanning transmission electron microscopy (STEM) verified method for atom probe tomography (APT) to accurately quantify Si/SiGe interfaces with 1Å precision in article number1700622 . The image depicts the atom probe field evaporation process with Si and Ge atoms field evaporating and being detected from a needle shaped SiGe specimen. The APT results are compared to STEM data after the post‐reconstruction process, and the results are in good agreement.