Atom Probe Tomography: Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography (Adv. Mater. Interfaces 21/2017). Issue 21 (21st November 2017) - Dyck, Ondrej
Abstract : Jonathan D. Poplawsky and co‐workers demonstrate a scanning transmission electron microscopy (STEM) verified method for atom probe tomography (APT) to accurately quantify Si/SiGe interfaces with 1Å precision in article number1700622 . The image depicts the atom probe field evaporation process with Si and Ge atoms field evaporating and being detected from a needle shaped SiGe specimen. The APT results are compared to STEM data after the post‐reconstruction process, and the results are in good agreement.