Band gap engineering of BC2N for nanoelectronic applications. (December 2017)

• Record Type: Journal Article
• Authors: Lim, Wei Hong; Hamzah, Afiq; Ahmadi, Mohammad Taghi; Ismail, Razali
• Is Part Of: Superlattices and microstructures. Volume 112(2017)
• Page Start: 328
• Page End: 338
• Publication Date: 2017-12
• Subjects: Analytical study -- Doped III–V material -- BC2NNW -- NNTB -- Dispersion relation -- Density of states; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2017.09.040
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: The BC2 N as an example of boron-carbon-nitride (BCN), has the analogous structure as the graphene and boron nitride. It is predicted to have controllable electronic properties. Therefore, the analytical study on the engineer-able band gap of the BC2 N is carried out based on the schematic structure of BC2 N. The Nearest Neighbour Tight Binding (NNTB) model is employed with the dispersion relation and the density of state (DOS) as the main band gap analysing parameter. The results show that the hopping integrals having the significant effect on the band gap, band structure and DOS of BC2 N nanowire (BC2 NNW) need to be taken into consideration. The presented model indicates consistent trends with the published computational results around the Dirac points with the extracted band gap of 0.12 eV. Also, it is distinguished that wide energy gap of boron nitride (BN) is successfully narrowed by this carbon doped material which assures the application of BC2 N on the nanoelectronics and optoelectronics in the near future. Highlights: The E-k relation and DOS on the tunable band gap of BC2 N are studied using Nearest Neighbour Tight Binding (NNTB) Model. The hopping integrals have noteworthy effect on the band structure and DOS of the BC2 N nanowire (BC2 NNW). The proposed model shows reliable trends around the Dirac points (Eg = 0.12 eV) which consistent with the published result. The wide band gap of BN is narrowed by the BC2 N assuring its application on the nanoelectronics and optoelectronics.