Phase transformation of GaAs at high pressures and temperatures. (February 2018)

• Record Type: Journal Article
• Authors: Ono, Shigeaki; Kikegawa, Takumi
• Is Part Of: Journal of physics and chemistry of solids. Volume 113(2018)
• Page Start: 1
• Page End: 4
• Publication Date: 2018-02
• Subjects: Semiconductors -- High pressure -- X-ray diffraction -- Phase transitions; Solids -- Periodicals; Solides -- Périodiques; Solids; Periodicals; 530.41
• DOI: 10.1016/j.jpcs.2017.10.005
• Languages: English
• ISSNs: 0022-3697

Abstract

Abstract: The high-pressure behavior of gallium arsenide, GaAs, has been investigated using an in-situ X-ray powder diffraction technique in a diamond anvil cell combined with a resistance heating method, at pressures and temperatures up to 25 GPa and 1000 K respectively. The pressure-induced phase transition from a zincblende to an orthorhombic ( Cmcm ) structure was observed. This transition occurred at 17.3 GPa and at room temperature, where a negative temperature dependence for this transition was confirmed. The transition boundary was determined to be P (GPa) = 18.0 − 0.0025 × T (K). Highlights: A phase transformation of GaAs is investigated using the diamond anvil cell. The phase boundary between zincblende and orthorhombic structures is determined. The boundary has a negative dP/dT slope.