Phase transformation of GaAs at high pressures and temperatures. (February 2018) - Ono, Shigeaki
Abstract: The high-pressure behavior of gallium arsenide, GaAs, has been investigated using an in-situ X-ray powder diffraction technique in a diamond anvil cell combined with a resistance heating method, at pressures and temperatures up to 25 GPa and 1000 K respectively. The pressure-induced phase transition from a zincblende to an orthorhombic ( Cmcm ) structure was observed. This transition occurred at 17.3 GPa and at room temperature, where a negative temperature dependence for this transition was confirmed. The transition boundary was determined to be P (GPa) = 18.0 − 0.0025 × T (K). Highlights: A phase transformation of GaAs is investigated using the diamond anvil cell. The phase boundary between zincblende and orthorhombic structures is determined. The boundary has a negative dP/dT slope.