ALD Al2O3 passivation of Lg = 100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates. (December 2017)

• Record Type: Journal Article
• Authors: Sun, Bing; Chang, Hudong; Wang, Shengkai; Niu, Jiebin; Liu, Honggang
• Is Part Of: Solid-state electronics. Volume 138(2017)
• Page Start: 40
• Page End: 44
• Publication Date: 2017-12
• Subjects: Metamorphic high-electron-mobility transistors (mHEMT) -- Al2O3 -- Atomic layer deposition (ALD) -- Cut-off frequency (fT) -- Maximum oscillation frequency (fmax); Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.10.005
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: In0.52 Al0.48 As/In0.7 Ga0.3 As metamorphic high-electron-mobility transistors (mHEMTs) on GaAs substrates have been demonstrated. The devices feature an epitaxial structure with Si-doped InP/In0.52 Al0.48 As Schottky layers, together with an atomic layer deposition (ALD) Al2 O3 passivation process. In comparison to the GaAs mHEMTs with plasma enhanced chemical vapor deposition (PECVD) SiN passivation, the devices with ALD Al2 O3 passivation exhibit more than one order of magnitude lower gate leakage current ( Jg ) and much lower contact resistance ( RC ) and specific contact resistivity ( ρC ). 100-nm gate length ( Lg ) In0.52 Al0.48 As/In0.7 Ga0.3 As mHEMTs with Si-doped InP/In0.52 Al0.48 As Schottky layers and ALD Al2 O3 passivation exhibit excellent DC and RF characteristics, such as a maximum oscillation frequency ( fmax ) of 388.2 GHz.