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Corrigendum to "Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV" [Carbon 68 (2014) 563–572]. (April 2015)
Record Type:
Journal Article
Title:
Corrigendum to "Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV" [Carbon 68 (2014) 563–572]. (April 2015)
Main Title:
Corrigendum to "Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV" [Carbon 68 (2014) 563–572]