Corrigendum to "Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV" [Carbon 68 (2014) 563–572]. (April 2015) - Gupta, B.; Notarianni, M.; Mishra, N.; Shafiei, M.; Iacopi, F.; Motta, N.