Cite
MLA Citation
Gun Hwan Kim et al.. “Four‐Bits‐Per‐Cell Operation in an HfO2‐Based Resistive Switching Device.” Small, vol. 13, no. 40, 2017, p. n/a. http://access.bl.uk/ark:/81055/vdc_100052624511.0x000014
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Gun Hwan Kim et al.. “Four‐Bits‐Per‐Cell Operation in an HfO2‐Based Resistive Switching Device.” Small, vol. 13, no. 40, 2017, p. n/a. http://access.bl.uk/ark:/81055/vdc_100052624511.0x000014