Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs. (November 2017)

• Record Type: Journal Article
• Authors: Chiu, Hsien-Chin; Chou, Min-Li; Cheng, Chun-Hu; Kao, Hsuan-Ling; Cho, Cheng-Lin
• Is Part Of: Microelectronics and reliability. Volume 78(2017)
• Page Start: 267
• Page End: 271
• Publication Date: 2017-11
• Subjects: Flicker noise -- Body effect -- Temperature effect -- nMOSFETs; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2017.09.002
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This study investigated the effects of temperature and body bias on drain current flicker noise (1/ f ) in 40-nm nMOSFETs. The 1/ f noise is attributable to the charge number fluctuation correlating with the mobility fluctuation. At 300 K, as the depletion width was decreased, 1/ f noise decreased with the body bias from − 0.5 to + 0.5 V in the weak inversion; conversely, 1/ f noise was independent of the body bias because of the neglected depletion charge capacitance in the strong inversion. When the temperature was below 150 K, 1/ f noise increased when the drain voltage was low because of the Fermi level toward the band edge, which has a higher trap density and corresponds to the inverse square of the subthreshold swing. However, when the drain voltage was high, 1/ f noise was dominated by the mobility fluctuation because a wider strong inversion region at 150 K resulted in a lower 1/ f noise and insignificant body effect. The analysis of this behavior in 40-nm devices may assist in determining the optimal device fabrication methods and circuit design. Highlights: The effects of temperature and body bias on 1/ f noise in 40-nm nMOSFETs were investigated. The 1/ f noise was inversely related to the temperature at a low VD . The 1/ f noise was proportional to temperature at a high VD . Body effect at 300 K should be considered and can be neglected at 150 K.