The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters. (December 2015)

• Record Type: Journal Article
• Authors: Liu, W.; Zhao, D.G.; Jiang, D.S.; Chen, P.; Liu, Z.S.; Zhu, J.J.; Li, X.; Liang, F.; Liu, J.P.; Zhang, S.M.; Yang, H.; Zhang, Y.T.; Du, G.T.
• Is Part Of: Superlattices and microstructures. Volume 88(2015)
• Page Start: 50
• Page End: 55
• Publication Date: 2015-12
• Subjects: InGaN/GaN multiple quantum well -- Green LEDs -- Efficiency droop -- Localization effect; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2015.08.026
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: Two different sets of structural parameters are used to fabricate InGaN/GaN multiple quantum well (MQW) green light-emitting diodes (LEDs) which have nearly the same light emission wavelength. It is found that, compared with the thin-well but high-In-content MQW LED, the efficiency droop of InGaN LED with the thick-well but low-In-content MQWs is less significant. Such reduction of droop may be attributed to the less electron overflowing, larger volume of active region and weaker delocalization effect, induced by the thicker well layers and lower In content in the latter. Highlights: Low-In-thick-well and high-In-thin-well MQW LEDs are fabricated, respectively. Two LED's wavelengths are the same but the droop behaviors are different. Low-In-thick-well MQW LED shows less efficiency droop. Less electron overflowing and weaker delocalization cause the reduction of droop.