Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDs. (December 2015)
- Record Type:
- Journal Article
- Title:
- Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDs. (December 2015)
- Main Title:
- Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDs
- Authors:
- Wang, Qiang
Zhu, Chuanrui
Zhou, Yufan
Wang, Xuesong
Liu, Baoli
Wang, Xuelin
Lv, Yuanjie
Feng, Zhihong
Xu, Xiangang
Ji, Ziwu - Abstract:
- Abstract: A strong phase-separated InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) producing a blue-green dual-wavelength spectrum has been grown, and fabricated into two nanopillar array structures with different etching depths: one fabricated only on the p-GaN layer and the other penetrating through the active layers. Micro-photoluminescence ( μ -PL) spectra have shown that compared with the as-grown (planar) LED, light extraction efficiency (LEE) is improved for both the shorter and the longer nanopillar array structures due to the increased light-extracting surface area and light-guiding effect, in contrast, internal quantum efficiency (IQE) is improved for only the longer one due to the relaxation of strain in the MQWs embedded in the nanopillars. Furthermore, the strain relaxation-induced peak blue-shift value is smaller for the green emission from In-rich quantum dots (QDs) than the blue emission from the InGaN matrix, and decreases for both the emissions with increasing temperature. The former is attributed to the quantum-confined Stark effect (QCSE) in the strong localized QDs of small size being smaller than in the InGaN matrix, the latter is due to the decrease of the thermal-mismatch strain in the MQWs with increasing temperature. Highlights: We explored the effect of the nanostructures on optical behaviors of the InGaN matrix and In-rich QDs, respectively. We explained temperature dependences of strain relaxation-induced peak blue-shift for bothAbstract: A strong phase-separated InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) producing a blue-green dual-wavelength spectrum has been grown, and fabricated into two nanopillar array structures with different etching depths: one fabricated only on the p-GaN layer and the other penetrating through the active layers. Micro-photoluminescence ( μ -PL) spectra have shown that compared with the as-grown (planar) LED, light extraction efficiency (LEE) is improved for both the shorter and the longer nanopillar array structures due to the increased light-extracting surface area and light-guiding effect, in contrast, internal quantum efficiency (IQE) is improved for only the longer one due to the relaxation of strain in the MQWs embedded in the nanopillars. Furthermore, the strain relaxation-induced peak blue-shift value is smaller for the green emission from In-rich quantum dots (QDs) than the blue emission from the InGaN matrix, and decreases for both the emissions with increasing temperature. The former is attributed to the quantum-confined Stark effect (QCSE) in the strong localized QDs of small size being smaller than in the InGaN matrix, the latter is due to the decrease of the thermal-mismatch strain in the MQWs with increasing temperature. Highlights: We explored the effect of the nanostructures on optical behaviors of the InGaN matrix and In-rich QDs, respectively. We explained temperature dependences of strain relaxation-induced peak blue-shift for both green and blue emissions. We explained the effect of the nanostructures on PL intensities of green and blue emissions. … (more)
- Is Part Of:
- Superlattices and microstructures. Volume 88(2015)
- Journal:
- Superlattices and microstructures
- Issue:
- Volume 88(2015)
- Issue Display:
- Volume 88, Issue 2015 (2015)
- Year:
- 2015
- Volume:
- 88
- Issue:
- 2015
- Issue Sort Value:
- 2015-0088-2015-0000
- Page Start:
- 323
- Page End:
- 329
- Publication Date:
- 2015-12
- Subjects:
- Nanopillar LED -- Strain relaxation -- Phase-separation -- Photoluminescence
Superlattices as materials -- Periodicals
Microstructure -- Periodicals
Semiconductors -- Periodicals
Superréseaux -- Périodiques
Microstructure (Physique) -- Périodiques
Semiconducteurs -- Périodiques
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/07496036 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.spmi.2015.09.028 ↗
- Languages:
- English
- ISSNs:
- 0749-6036
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8547.076700
British Library DSC - BLDSS-3PM
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- 5063.xml