Modelling and simulation of subthreshold behaviour of cylindrical surrounding double gate MOSFET for enhanced electrostatic integrity. (December 2015)

• Record Type: Journal Article
• Authors: Verma, Jay Hind Kumar; Haldar, Subhasis; Gupta, R.S.; Gupta, Mridula
• Is Part Of: Superlattices and microstructures. Volume 88(2015)
• Page Start: 354
• Page End: 364
• Publication Date: 2015-12
• Subjects: ATLAS -- Cylindrical surrounding double gate (CSDG) MOSFET -- Electric field: threshold voltage; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2015.09.024
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this paper, a physics based model has been presented for the Cylindrical Surrounding Double Gate (CSDG) Nano-wire MOSFET. The analytical model is based on the solution of 2-D Poisson's equation in a cylindrical coordinate system using super-position technique. CSDG MOSFET is a cylindrical version of double gate MOSFET which offers maximum gate controllability over the channel. It consists of an inner gate and an outer gate. These gates render effective charge control inside the channel and also provide excellent immunity to short channel effects. Surface potential and electric field for inner and outer gate are derived. The impact of channel length on electrical characteristics of CSDG MOSFET is analysed and verified using ATLAS device simulator. The model is also extended for threshold voltage modelling using extrapolation method in strong inversion region. Drain current and transconductance are compared with conventional Cylindrical Surrounding Gate (CSG) MOSFET. The excellent electrical performance makes CSDG MOSFET promising candidates to extend CMOS scaling roadmap beyond CSG MOSFET. Highlights: Potential and threshold voltage model has been developed for CSDG MOSFET. Super-position technique has been used to solve the Poisson's equation in cylindrical coordinate. Two cylindrical surrounding gates provide maximum controllability over the channel charge. Tremendous increment in drain current and transconductance for CSDG MOSFET than the CSG MOSFET.