Origin of the improved stability under negative gate-bias illumination stress in various sputtering power fabricated ZnSnO TFTs. (December 2015)

• Record Type: Journal Article
• Authors: Huang, Chuan-Xin; Li, Jun; Fu, Yi-Zhou; Zhang, Jian-Hua; Jiang, Xue-Yin; Zhang, Zhi-Lin
• Is Part Of: Superlattices and microstructures. Volume 88(2015)
• Page Start: 426
• Page End: 433
• Publication Date: 2015-12
• Subjects: ZnSnO TFTs -- rf sputtering power -- ALD Al2O3 -- Negative gate-bias illumination stability; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2015.09.036
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this work, we report the influence of ZnSnO channel layer sputtering power in the stability of ZnSnO TFTs under negative gate-bias illumination stress (NBIS). The origin of threshold voltage shift results from combined effect of two factors between the little defect-induced trap densities originated from oxygen vacancies and better channel–insulator interface. The kinetic energy of the ions at a proper rf sputtering power is responsible for less defect-induced trap density and better channel–insulator interface. Therefore, the ZnSnO TFT fabricated at 75 W sputtering power shows a better NBIS stability. In addition, the trap density is extracted by temperature-dependent field-effect measurements and it is consistent with the change of stability under NBIS and thermal stress. Highlights: Negative bias illumination stability. Stability under thermal stress. Influence of sputtering power in defect-induced trap densities and channel–insulator interface trap densities.