Investigation of performance enhancement in InAs/InGaAs heterojunction-enhanced N-channel tunneling field-effect transistor. (December 2015)

• Record Type: Journal Article
• Authors: Han, Genquan; Zhao, Bin; Liu, Yan; Wang, Hongjuan; Liu, Mingshan; Zhang, Chunfu; Hu, Shengdong; Hao, Yue
• Is Part Of: Superlattices and microstructures. Volume 88(2015)
• Page Start: 90
• Page End: 98
• Publication Date: 2015-12
• Subjects: Tunneling FET -- Band to band tunneling (BTBT) -- Subthreshold swing; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2015.08.027
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: We design a heterojunction-enhanced n-channel tunneling field effect transistor (HE-TFET) with an InAs/In1− x Ga x As heterojunction located in channel region with a distance of L T-H from source/channel tunneling junction. The influence of L T-H on the performance of HE-TFETs is investigated by simulation. Compared with InAs homo-NTFET, the positive shift of onset voltage, the steeper subthreshold swing (SS), and the enhanced on-state current I ON are achieved in HE-NTFETs, which is attributed to the modulation of the heterojunction on band-to-band tunneling. At a supply voltage of 0.3 V, I ON of InAs/In0.9 Ga0.1 As HE-NTFET with a L T-H of 6 nm demonstrates an enhancement of 119.3% in comparison with the homo device. Furthermore, the impact of Ga composition on the performance of HE-NTFETs is studied. As the Ga composition increases, the average SS characteristics of HE-NTFETs are improved, while the drive current of devices is reduced due to the increasing of tunneling barrier. Highlights: InAs/In1− x Ga x As heterostructure-enhanced tunneling field-effect transistor (HE-TFET) is designed and investigated. InAs/In1− x Ga x As HE-TFET demonstrates an improved I ON and subthreshold swing compared with the homo TFET at V DD of 0.3 V. Impact of Ga composition on InAs/In1− x Ga x As HE-TFET is studied.