Soft error rate comparison of 6T and 8T SRAM ICs using mono-energetic proton and neutron irradiation sources. (November 2017)

• Record Type: Journal Article
• Authors: Malagón, D.; Bota, S.A.; Torrens, G.; Gili, X.; Praena, J.; Fernández, B.; Macías, M.; Quesada, J.M.; Sanchez, Carlos Guerrero; Jiménez-Ramos, M.C.; García López, J.; Merino, J.L.; Segura, J.
• Is Part Of: Microelectronics and reliability. Volume 78(2017)
• Page Start: 38
• Page End: 45
• Publication Date: 2017-11
• Subjects: Soft errors -- Single event effects -- Single Event Upset -- Radiation effects -- SRAM -- Neutrons; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2017.07.093
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: We present experimental results of soft errors produced by proton and neutron irradiation of minimum-size six-transistors (6T) and eight-transistors (8T) bit-cells SRAM memories produced with 65 nm CMOS technology using an 18 MeV proton beam and a neutron beam of 4.3–8.5 MeV. All experiments have been carried out at the National Center of Accelerators (CNA) in Seville, Spain. Similar soft error rate levels have been observed for both cell designs despite the larger area occupied by the 8T cells, although the trend for multiple events has been higher in 6T. Highlights: Soft error rate comparison between minimum size 6T and 8T SRAM cells implemented on a 65 nm commercial CMOS technology is reported. A study was performed using different radiation sources: 17 MeV monoenergetic protons and neutrons in the range from 5.8–8.5 MeV. Soft error rates and related cross sections for both cells and both radiation sources are presented. We found that multi-bit upset rate is higher in 6T than in 8T SRAM cells.