A comparative study on electrothermal characteristics of nanoscale multiple gate MOSFETs. (November 2017)

• Record Type: Journal Article
• Authors: Gu, Qi-Lin; Zhang, Peng; Ru, Yi; Song, Hao; Zhao, Wen-Sheng; Yin, Wen-Yan
• Is Part Of: Microelectronics and reliability. Volume 78(2017)
• Page Start: 362
• Page End: 369
• Publication Date: 2017-11
• Subjects: Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2017.09.003
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Multiple-gate (MG) MOSFETs are promising candidates for next-generation integrated circuits technology. This paper presents the electrothermal characterization of three-type nanoscale MG MOSFETs, i.e., Π-gate, quadruple-gate (QG), and Ω-gate MOSFETs. Meanwhile, the temperature distribution of a real Ω-gate MOSFET with gradual channel width is also studied. Finite difference method (FDM) is adopted to solve the 3-D time-dependent heat conduction equations. The simulation results of the steady-state temperature distribution are validated against the commercial software COMSOL. Moreover, the transient temperature response of MG MOSFETs to different waveforms are also captured and compared.