Accurate analytical modeling of junctionless DG-MOSFET by green's function approach. (November 2017)

• Record Type: Journal Article
• Authors: Nandi, Ashutosh; Pandey, Nilesh
• Is Part Of: Superlattices and microstructures. Volume 111(2017)
• Page Start: 983
• Page End: 990
• Publication Date: 2017-11
• Subjects: Junctionless double gate MOSFET (JL-DG-MOSFET) -- Dirichlet and neumann boundary conditions -- Multi-zone techniques; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2017.07.062
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: An accurate analytical model of Junctionless double gate MOSFET (JL-DG-MOSFET) in the subthreshold regime of operation is developed in this work using green's function approach. The approach considers 2-D mixed boundary conditions and multi-zone techniques to provide an exact analytical solution to 2-D Poisson's equation. The Fourier coefficients are calculated correctly to derive the potential equations that are further used to model the channel current and subthreshold slope of the device. The threshold voltage roll-off is computed from parallel shifts of I ds - V gs curves between the long channel and short-channel devices. It is observed that the green's function approach of solving 2-D Poisson's equation in both oxide and silicon region can accurately predict channel potential, subthreshold current ( I sub ), threshold voltage ( V t ) roll-off and subthreshold slope ( SS ) of both long & short channel devices designed with different doping concentrations and higher as well as lower t si / t ox ratio. All the analytical model results are verified through comparisons with TCAD Sentaurus simulation results. It is observed that the model matches quite well with TCAD device simulations. Highlights: For the first time an exact analytical model of junctionless double gate MOSFET has been developed. Green's function approach with mixed boundary condition and multi-zone techniques has been used to derive the potential model. The model is used to derive sub threshold current, Vt roll-off and sub threshold slope. The analytical model matches quite well with TCAD device simulations.