A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations. (November 2017)

• Record Type: Journal Article
• Authors: Hosenfeld, Fabian; Horst, Fabian; Iñíguez, Benjamín; Lime, François; Kloes, Alexander
• Is Part Of: Solid-state electronics. Volume 137(2017)
• Page Start: 70
• Page End: 79
• Publication Date: 2017-11
• Subjects: Ultra-short Double-Gate (DG) MOSFET -- Non Equilibrium Green's Function (NEGF) -- Source-to-Drain (SD) tunneling -- Compact model -- Multi-scale simulation; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.08.006
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: The presented model is based on an non-iterative NEGF formalism. Channel length from 6 nm to 30 nm of DG MOSFETs are considered. Source-to-drain tunneling and thermionic emission current is calculated physically. Abstract: Source-to-drain (SD) tunneling decreases the device performance in MOSFETs falling below the 10 nm channel length. Modeling quantum mechanical effects including SD tunneling has gained more importance specially for compact model developers. The non-equilibrium Green's function (NEGF) has become a state-of-the-art method for nano-scaled device simulation in the past years. In the sense of a multi-scale simulation approach it is necessary to bridge the gap between compact models with their fast and efficient calculation of the device current, and numerical device models which consider quantum effects of nano-scaled devices. In this work, an NEGF based analytical model for nano-scaled double-gate (DG) MOSFETs is introduced. The model consists of a closed-form potential solution of a classical compact model and a 1D NEGF formalism for calculating the device current, taking into account quantum mechanical effects. The potential calculation omits the iterative coupling and allows the straightforward current calculation. The model is based on a ballistic NEGF approach whereby backscattering effects are considered as second order effect in a closed-form. The accuracy and scalability of the non-iterative DG MOSFET model is inspected in comparison with numerical NanoMOS TCAD data for various channel lengths. With the help of this model investigations on short-channel and temperature effects are performed.