Cite
HARVARD Citation
Li, X. et al. (2017). 28 nm CMOS process ESD protection based on diode-triggered silicon controlled rectifier. Solid-state electronics. pp. 128-133. [Online].
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Li, X. et al. (2017). 28 nm CMOS process ESD protection based on diode-triggered silicon controlled rectifier. Solid-state electronics. pp. 128-133. [Online].