Cite
HARVARD Citation
Li, J. et al. (n.d.). Strain Quantification Analysis of Epitaxial SiGe on SOI by Nanobeam Diffraction (NBD). Microscopy and microanalysis. pp. 1070-1071. [Online].
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Li, J. et al. (n.d.). Strain Quantification Analysis of Epitaxial SiGe on SOI by Nanobeam Diffraction (NBD). Microscopy and microanalysis. pp. 1070-1071. [Online].