Optical and electric control of charge and spin-valley transport in ferromagnetic silicene junction. (September 2017)

• Record Type: Journal Article
• Authors: Qiu, Xuejun; Cao, Zhenzhou; Lei, Jiemei; Shen, Jian; Qin, Chaochao
• Is Part Of: Superlattices and microstructures. Volume 109(2017)
• Page Start: 735
• Page End: 742
• Publication Date: 2017-09
• Subjects: Spintronics -- Valleytronics -- Silicene -- Ferromagnetic -- Optical; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2017.05.059
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: We theoretically investigate the charge and spin-valley transport in a normal/ferromagnetic/normal silicene junction, where the ferromagnetic region is exposed to an off-resonant circularly polarized light and perpendicular electric field. We show that one wider transport gap can be produced by the optical field than the electric field, which provides a simple way to fabricate an optical controlled on/off switch. On the other hand, in the presence of a proper optical field and ferromagnetic exchange field, the spin-polarized conductance is enhanced above 90%, and the polarized direction can be inverted just by reversing the polarization of the light. Additionally, the valley-polarized conductance is sensitive to the optical and electric field, under proper values, one near perfect K ( K ′ ) valley-polarized conductance exceeding 95% is realized. All these findings are well understood from the band structure of silicene and expected to be beneficial for real applications in high performance spintronics and valleytronics. Highlights: The charge and spin-valley transport in a normal/ferromagnetic/normal silicene junction is investigated. One wider transport gap of charge conductance can be produced by the optical field than the electric field. The spin-polarized conductance is enhanced above 90% under a proper optical field and ferromagnetic exchange field. One near perfect K ( K ′) valley-polarized conductance exceeding 95% conductance is realized.