Role of different kinds of superlattices on the strain engineering of GaN films grown on Si (111). (September 2017)

• Record Type: Journal Article
• Authors: Yang, Qiankun; Li, Zhonghui; Pan, Lei; Luo, Weike; Dong, Xun
• Is Part Of: Superlattices and microstructures. Volume 109(2017)
• Page Start: 249
• Page End: 253
• Publication Date: 2017-09
• Subjects: Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2017.05.008
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: The role of the Al0.2 Ga0.8 N/Al0.4 Ga0.6 N superlattice (SL) and AlN/GaN SL on the strain engineering of GaN films on Si (111) is investigated. From Raman scattering measurements, a satellite E2 peak of GaN is observed in the sample with AlN/GaN SL. It is also found the AlN/GaN SL buffer have a better effect at the blocking of threading dislocations (TDs) while lots of dislocations annihilate at the interface of Al0.2 Ga0.8 N/Al0.4 Ga0.6 N SL and GaN. In the GaN films, TDs bend and interact with each other, leading to the relaxation of compressive stress in GaN films. The relaxation rate of compressive stress in GaN films with different SL structures is studied. Highlights: The satellite E2 peak stems from the GaN contents of the AlN/GaN SL. Different SLs have different dislocation bending and annihilation mechanisms. The relaxation rate of stress in GaN is related to the density of dislocations.