Monte Carlo modelling of Schottky diode for rectenna simulation. (September 2017)

• Record Type: Journal Article
• Authors: Bernuchon, E.; Aniel, F.; Zerounian, N.; Grimault-Jacquin, A.S.
• Is Part Of: Solid-state electronics. Volume 135(2017)
• Page Start: 71
• Page End: 77
• Publication Date: 2017-09
• Subjects: Monte-Carlo (MC) -- Schottky diode -- Harmonic Balance (HB) simulation -- Parameters extraction -- Tunneling -- Image force (IF); Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.06.031
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Weight of tunneling and thermionic current in a Schottky Diode simulated with a 1D Monte Carlo solver. Comparison of different extraction methods on the parameters of the electrical model. Impact of the non-linear ideality factor, saturation current and series resistance on the performance of a rectifier circuit. Abstract: Before designing a detector circuit, the electrical parameters extraction of the Schottky diode is a critical step. This article is based on a Monte-Carlo (MC) solver of the Boltzmann Transport Equation (BTE) including different transport mechanisms at the metal-semiconductor contact such as image force effect or tunneling. The weight of tunneling and thermionic current is quantified according to different degrees of tunneling modelling. The I-V characteristic highlights the dependence of the ideality factor and the current saturation with bias. Harmonic Balance (HB) simulation on a rectifier circuit within Advanced Design System (ADS) software shows that considering non-linear ideality factor and saturation current for the electrical model of the Schottky diode does not seem essential. Indeed, bias independent values extracted in forward regime on I-V curve are sufficient. However, the non-linear series resistance extracted from a small signal analysis (SSA) strongly influences the conversion efficiency at low input powers.