X-band 5-bit MMIC phase shifter with GaN HEMT technology. (October 2017)

• Record Type: Journal Article
• Authors: Sun, Pengpeng; Liu, Hui; Zhang, Zongjing; Geng, Miao; Zhang, Rong; Luo, Weijun
• Is Part Of: Solid-state electronics. Volume 136(2017)
• Page Start: 18
• Page End: 23
• Publication Date: 2017-10
• Subjects: Phase shifter -- Switched filter -- High-pass/low-pass -- GaN HEMT -- X-band; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.06.021
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: The design approach and performance of a 5-bit digital phase shifter implemented with 0.25 μm GaN HEMT technology for X-band phased arrays are described. The switched filter and high-pass/low-pass networks are proposed in this article. For all 32 states of the 5-bit phase shifter, the RMS phase error less than 5.5°, RMS amplitude error less than 0.8 dB, insertion loss less than 12 dB and input/output return loss less than 8.5 dB are obtained overall 8–12 GHz. The continuous wave power capability is also measured, and a typical input RF P1dB data of 32 dBm is achieved at 8 GHz.