Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf0.5Zr0.5)O2 thin films deposited on various substrates. (1st November 2017)

• Record Type: Journal Article
• Authors: Shiraishi, Takahisa; Katayama, Kiliha; Yokouchi, Tatsuhiko; Shimizu, Takao; Oikawa, Takahiro; Sakata, Osami; Uchida, Hiroshi; Imai, Yasuhiko; Kiguchi, Takanori; Konno, Toyohiko J.; Funakubo, Hiroshi
• Is Part Of: Materials science in semiconductor processing. Volume 70(2017)
• Page Start: 239
• Page End: 245
• Publication Date: 2017-11-01
• Subjects: (Hf0.5Zr0.5)O2 thin films -- Ferroelectric property -- Film thickness dependence; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.12.008
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this work, the effect of the film thickness on the crystal structure and ferroelectric properties of (Hf0.5 Zr0.5 )O2 thin films was investigated. The thin films were deposited on (111) Pt-coated SiO2, Si, and CaF2 substrates with thermal expansion coefficients of 0.47, 4.5, and 22×10 −6 /°C, respectively. From the X-ray diffraction measurements, it was found that the (Hf0.5 Zr0.5 )O2 thin films deposited on the SiO2 and CaF2 substrates experienced in-plane tensile and compressive strains, respectively, in comparison with the films deposited on the Si substrates. For films deposited on all three substrates, the volume fraction of the monoclinic phase increased with increasing film thickness, with the SiO2 substrate having the lowest monoclinic phase volume fraction at all film thicknesses tested. The grain size of the films, which is an important factor for the formation of the ferroelectric phase, remained almost constant at about 10 nm in diameter regardless of the film thickness and type of substrate utilized. Ferroelectricity was observed for the 17 nm-thick films deposited on SiO2 and Si substrates, and the maximum remanent polarization ( P r ) value of 9.3 µC/cm 2 was obtained for films deposited on the SiO2 substrate. In contrast, ferroelectricity with P r =4.4 µC/cm 2 was observed only for film on SiO2 substrate in case of 55 nm-thick films. These results suggest that the films under in-plane tensile strain results in the larger ferroelectricity for 17 nm-thick films and have a ferroelectricity up to 55 nm-thick films.