Cite
MLA Citation
Masahiro Fukuda et al.. “Formation and characterization of Ge1−x−ySixSny/Ge1−xSnx/Ge1−x−ySixSny double heterostructures with strain-controlled Ge1−x−ySixSny layers.” Materials science in semiconductor processing, vol. 70, 2017, pp. 156–161. http://access.bl.uk/ark:/81055/vdc_100049903484.0x000041