Homoepitaxial diamond chemical vapor deposition for ultra-light doping. (1st November 2017)

• Record Type: Journal Article
• Authors: Teraji, T.; Isoya, J.; Watanabe, K.; Koizumi, S.; Koide, Y.
• Is Part Of: Materials science in semiconductor processing. Volume 70(2017)
• Page Start: 197
• Page End: 202
• Publication Date: 2017-11-01
• Subjects: Diamond -- Chemical vapor deposition -- Homoepitaxial -- Doping; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.11.012
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Homoepitaxial diamond films were grown by chemical vapor deposition using ultrahigh vacuum (UHV)-compatible deposition systems. Optimized growth conditions with oxygen added to the source gas enabled long-duration homoepitaxial diamond growth without formation of non-epitaxial crystallites. Under these conditions, unintentionally incorporated nitrogen was suppressed well below 10 11 cm -3 . By adding silicon or boron during growth with their ratio to carbon of below 1 ppb, formation of single SiV color center in homoepitaxial diamond and deposition of lightly doped p -layer was achieved with the concentration of 10 15 cm -3 .