Sb-implanted ZnO ultra-thin films. (October 2017)

• Record Type: Journal Article
• Authors: Millesi, Salvatrice; Catalano, Maria Rita; Impellizzeri, Giuliana; Crupi, Isodiana; Malandrino, Graziella; Priolo, Francesco; Gulino, Antonino
• Is Part Of: Materials science in semiconductor processing. Volume 69(2017)
• Page Start: 32
• Page End: 35
• Publication Date: 2017-10
• Subjects: ZnO -- Antimony -- Film -- Diode -- MOCVD; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.12.025
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Mild heating of the Zn(C5 F6 HO2 )2 ·2H2 O·CH3 (OCH2 CH2 )2 OCH3 precursor allowed MOCVD deposition of ZnO films, in a low-pressure horizontal hot-wall reactor, on ITO substrates. The ZnO films were subsequently implanted with Sb ions. XRD measurements provided evidence that they consist of hexagonal, (002) and (101) oriented, crystals. UV–vis spectra showed that the transmittance of these films in the visible region is about 90%. The Sb implanted ZnO film showed a current-voltage characteristic that resembles that of a rectifying diode. This study represents the first example of Sb-implantation in ZnO films obtained by MOCVD.