Subsurface damage in polishing–annealing processed ZnO substrates. (October 2017)

• Record Type: Journal Article
• Authors: Prozheeva, V.; Johansen, K.M.; Neuvonen, P.T.; Zubiaga, A.; Vines, L.; Kuznetzov, A.Yu.; Tuomisto, F.
• Is Part Of: Materials science in semiconductor processing. Volume 69(2017)
• Page Start: 19
• Page End: 22
• Publication Date: 2017-10
• Subjects: ZnO -- Positron annihilation spectroscopy -- Secondary ion mass spectrometry -- Vacancies; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.02.021
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Positron annihilation spectroscopy and secondary ion mass spectrometry have been applied to study the evolution of polishing-induced defects in hydrothermally grown ZnO samples depending on the annealing temperature. Annealing of the as-grown ZnO wafer at 1200–1500 °C is found to lead to Li accumulation in the sub-surface layer, and significant reduction of Li content in the bulk. Polishing is shown to introduce vacancy complexes involving both V Zn and V O . Post-polishing annealing of hydrothermally grown ZnO with removed Li layer at 800 ° C reduces the concentration of polishing-induced defects below the detection limit.