Formation of Zn- and O- vacancy clusters in ZnO through deuterium annealing. (October 2017)

• Record Type: Journal Article
• Authors: Johansen, K.M.; Tuomisto, F.; Makkonen, I.; Vines, L.
• Is Part Of: Materials science in semiconductor processing. Volume 69(2017)
• Page Start: 23
• Page End: 27
• Publication Date: 2017-10
• Subjects: ZnO -- Defects -- Vacancy clusters -- Secondary ion mass spectrometry -- Positron annihilation spectroscopy; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.11.030
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Open volume defects, clearly distinguishable from the isolated Zn-vacancy are observed in hydrothermally grown ZnO after exposure to deuterium gas at elevated temperatures. From a combination of secondary ion mass spectrometry (SIMS), positron annihilation spectroscopy (PAS) and density functional theory (DFT) calculations it is found that as a result of this treatment vacancy clusters consisting of minimum one Zn- and one O-vacancy are formed, in contrast to introduction of isolated O-vacancies. A scenario for the cluster formation is proposed, where Zn- and O-vacancies originate from the bulk of the sample and the sample surface, respectively. A fraction of the vacancy clusters are decorated by Li and/or H and may therefore be indirectly observed by SIMS. The peak in Li-concentration at about 100 nm below the sample surface, as observed by SIMS is in good correspondence with the PAS-results.