Cite

APA Citation

    Stockmeier, L., Lehmann, L., Miller, A., Reimann, C., & Friedrich, J. (2017). dislocation formation in heavily As‐doped Czochralski grown silicon. Crystal research and technology, 52(8), n/a. http://access.bl.uk/ark:/81055/vdc_100048667947.0x000050
  
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