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HARVARD Citation
Zhang, L. et al. (2017). GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure. Physica status solidi. 214 (8), p. n/a. [Online].
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Zhang, L. et al. (2017). GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure. Physica status solidi. 214 (8), p. n/a. [Online].