GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure. Issue 8 (26th May 2017)

• Record Type: Journal Article
• Authors: Zhang, Lingxia; Tang, Shaoji; Wu, Hualong; Wang, Hailong; Wu, Zhisheng; Jiang, Hao
• Is Part Of: Physica status solidi. Volume 214:Issue 8(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-05-26
• Subjects: AlGaN -- GaN -- heterojunctions -- optical gain -- phototransistors; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201600821
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : The fabrication and characterization of GaN/Al0.1 Ga0.9 N visible‐blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low‐pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150‐μm‐diameter active area exhibited very low dark currents below 1pA up to a bias voltage of 3 V. High ultraviolet‐to‐visible rejection ratios of 1.9 × 10 4 and 1.2 × 10 2 were obtained at the bias voltages of 2 and 4 V, respectively. Optical gain as high as 1.6 × 10 3 was achieved.