Cite
MLA Citation
Atsushi Tanaka et al.. “Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE.” Physica status solidi, vol. 214, no. 8, 2017, p. n/a. http://access.bl.uk/ark:/81055/vdc_100048211072.0x000019