Cite
HARVARD Citation
Tanaka, A. et al. (2017). Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE. Physica status solidi. 214 (8), p. n/a. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Tanaka, A. et al. (2017). Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE. Physica status solidi. 214 (8), p. n/a. [Online].