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APA Citation
Sugimoto, K., Nishihira, T., Arita, N., Dempo, Y., Okada, N., & Tadatomo, K. (2017). characterization of high electron mobility transistor fabricated on hydride vapor phase epitaxy‐grown GaN templates containing various Fe concentrations. Physica status solidi, 14(8), n/a. http://access.bl.uk/ark:/81055/vdc_100048211072.0x000008