A comprehensive model on field-effect pnpn devices (Z2-FET). (August 2017)

• Record Type: Journal Article
• Authors: Taur, Yuan; Lacord, Joris; Parihar, Mukta Singh; Wan, Jing; Martinie, Sebastien; Lee, Kyunghwa; Bawedin, Maryline; Barbe, Jean-Charles; Cristoloveanu, Sorin
• Is Part Of: Solid-state electronics. Volume 134(2017)
• Page Start: 1
• Page End: 8
• Publication Date: 2017-08
• Subjects: Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.05.004
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: A comprehensive model for field-effect pnpn devices (Z 2 -FET) is presented. It is based on three current continuity equations coupled to two MOS equations. The model reproduces the characteristic S-shaped I-V curve when the device is driven by a current source. The negative resistance region at intermediate currents occurs as the center junction undergoes a steep transition from reverse to forward bias. Also playing a vital role are the mix and match of the minority carrier diffusion current and the generation recombination current. Physical insights to the key mechanisms at work are gained by regional approximations of the model, from which analytical expressions for the maximum and minimum voltages at the switching points are derived.