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APA Citation
Nakamura, H., Rungger, I., Sanvito, S., Inoue, N., Tominaga, J., & Asai, Y. (2017). resistive switching mechanism of GeTe–Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states. Nanoscale, 9(27), 9386–9395. http://access.bl.uk/ark:/81055/vdc_100047619256.0x000021