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HARVARD Citation
Nakamura, H. et al. (2017). Resistive switching mechanism of GeTe–Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states. Nanoscale. 9 (27), pp. 9386-9395. [Online].
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Nakamura, H. et al. (2017). Resistive switching mechanism of GeTe–Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states. Nanoscale. 9 (27), pp. 9386-9395. [Online].