Enhancement of photoluminescence in Sr doped ZnO thin films prepared by spray pyrolysis. (September 2017)

• Record Type: Journal Article
• Authors: Raghavendra, P.V.; Bhat, J.S.; Deshpande, N.G.
• Is Part Of: Materials science in semiconductor processing. Volume 68(2017)
• Page Start: 262
• Page End: 269
• Publication Date: 2017-09
• Subjects: Thin film -- Zinc Oxide -- Sr-doping -- Spray pyrolysis -- Optical band gap -- Photoluminescence; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.06.028
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Photoluminescence characteristics of strontium doped zinc oxide (ZnO:Sr) thin films grown by spray pyrolysis method were investigated. The ZnO:Sr films were highly transparent having polycrystalline hexagonal wurtzite structure. A redshift of 130 meV in the optical band gap was observed owing to atomic size mismatch induced defect states and increase in the crystallite size in ZnO:Sr films. The enhancement of intensity of violet emission in room temperature photoluminescence by 250% is in correlation with the improved surface morphology at higher concentration of Sr in ZnO:Sr thin film. The observed increment in visible emissions is attributed to Sr induced oxygen vacancy related recombination in ZnO.