Electron interference effects and strong localization in Cu doped ZnO thin films. (September 2017)

• Record Type: Journal Article
• Authors: Das, Amit K.; Misra, P.; Ajimsha, R.S.; Sahu, V.K.; Singh, B.
• Is Part Of: Materials science in semiconductor processing. Volume 68(2017)
• Page Start: 275
• Page End: 278
• Publication Date: 2017-09
• Subjects: 72.20.Ee -- 72.15.Rn -- 72.80.Ey; Electrical properties -- Semiconductors -- Cu doped ZnO -- Quantum corrections; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.06.024
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Electron interference effects and transition from weakly localized to a strongly localized transport regime is observed in Cu doped ZnO thin films grown by pulsed laser deposition on c-sapphire substrates. The doping concentration of Cu was varied from 0% to 10%. Up to the doping concentration of ~ 0.5%, the films showed weakly localized behavior where quantum corrections to conductivity due to electron interference was active. At these doping concentrations, a transition from 3D to 2D weak localization was also observed as the measurement temperature was decreased. But at Cu concentrations of 5% and beyond, the films were found to show behavior of strong localization where the transport at low temperature was dominated by hopping mechanism.