Cite
MLA Citation
Chih-Yang Lin et al.. “Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode.” Nanoscale, vol. 9, no. 25, 2017, pp. 8586–8590. http://access.bl.uk/ark:/81055/vdc_100047119563.0x000025