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HARVARD Citation
Caliebe, M. et al. (n.d.). Improvements of MOVPE grown (11$ \bar 2 $2) oriented GaN on pre‐structured sapphire substrates using a SiNx interlayer and HVPE overgrowth. Physica status solidi. 11 (3), pp. 525-529. [Online].
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Caliebe, M. et al. (n.d.). Improvements of MOVPE grown (11$ \bar 2 $2) oriented GaN on pre‐structured sapphire substrates using a SiNx interlayer and HVPE overgrowth. Physica status solidi. 11 (3), pp. 525-529. [Online].