Improvements of MOVPE grown (11$ \bar 2 $2) oriented GaN on pre‐structured sapphire substrates using a SiNx interlayer and HVPE overgrowth. Issue 3 (4th March 2014)

• Record Type: Journal Article
• Authors: Caliebe, Marian; Meisch, Tobias; Neuschl, Benjamin; Bauer, Sebastian; Helbing, Jeffrey; Beck, Dominik; Thonke, Klaus; Klein, Martin; Heinz, Dominik; Scholz, Ferdinand
• Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 11:Issue 3/4(2014:Apr.)
• Page Start: 525
• Page End: 529
• Publication Date: 2014-03-04
• Subjects: semipolar (11$ \bar 2 $2) GaN -- SiN‐interlayer -- pre‐structured sapphire substrates -- oxygen doping on semipolar planes; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300527
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: In this article two methods for improvements of (11$ \bar 2 $ 2) oriented semipolar GaN grown by MOVPE on prestructured sapphire substrates are investigated. The integration of a SiNx interlayer helps to obtain a better crystal quality. Also the overgrowth of the MOVPE samples by HVPE is a way to obtain a smoother GaN surface. A high incorporation of oxygen on (11‐22) oriented GaN compared to (0001) oriented GaN grown by HVPE was observed. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)