Cite
MLA Citation
Tobias Meisch et al.. “(20$ \bar 2 $1) MOVPE and HVPE GaN grown on 2″ patterned sapphire substrates.” Physica status solidi, vol. 11, no. 3, n.d., pp. 537–540. http://access.bl.uk/ark:/81055/vdc_100047251471.0x000001
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Tobias Meisch et al.. “(20$ \bar 2 $1) MOVPE and HVPE GaN grown on 2″ patterned sapphire substrates.” Physica status solidi, vol. 11, no. 3, n.d., pp. 537–540. http://access.bl.uk/ark:/81055/vdc_100047251471.0x000001