Cite
HARVARD Citation
Meisch, T. et al. (n.d.). (20$ \bar 2 $1) MOVPE and HVPE GaN grown on 2″ patterned sapphire substrates. Physica status solidi. 11 (3), pp. 537-540. [Online].
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Meisch, T. et al. (n.d.). (20$ \bar 2 $1) MOVPE and HVPE GaN grown on 2″ patterned sapphire substrates. Physica status solidi. 11 (3), pp. 537-540. [Online].