Cite

    Oliver Schulz et al.. “Wafer curvature, temperature inhomogeneity, plastic deformation and their impact on the properties of GaN on silicon power and opto‐electronic structures.” Physica status solidi, vol. 11, no. 3, n.d., pp. 397–400. http://access.bl.uk/ark:/81055/vdc_100047155701.0x000001