Heterojunctions based on photochemically deposited CuxZnyS and electrochemically deposited ZnO. (May 2015)

• Record Type: Journal Article
• Authors: Ichimura, Masaya; Maeda, Yosuke
• Is Part Of: Solid-state electronics. Volume 107(2015)
• Page Start: 8
• Page End: 10
• Publication Date: 2015-05
• Subjects: CuZnS -- Photochemical deposition -- ZnO -- Heterostructure -- Photovoltaic effect; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.02.016
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Transparent Cu x Zn y S films are deposited by photochemical deposition. The Cu x Zn y S films are p-type and have a band gap of about 3.6 eV. pn heterostructures are fabricated by depositing ZnO on Cu x Zn y S by electrochemical deposition. The heterostructures show rectification properties and weak photovoltaic effects. Abstract: Cu x Zn y S has p-type conductivity for a wide range of Cu content and a wide band gap (>3 eV) with Zn-rich composition. In this work, Cu x Zn y S films were deposited by the photochemical deposition, where the film was deposited on the substrate immersed in the solution owing to reactions activated by UV light. The deposition solution contained 5 mM CuSO4, 25 mM ZnSO4 and 400 mM Na2 S2 O3 . The deposited film showed transmission larger than 70% in the visible range, and its band gap was about 3.7 eV. pn heterostructures were fabricated by depositing ZnO on the Cu x Zn y S film by the pulse-biased electrochemical deposition from a solution containing 100 mM Zn(NO3 )2 . When the ZnO film thickness was larger than 1 μm, the heterostructures showed rectification properties and weak photovoltaic effects.