The preparation of oxygen-deficient ZnO nanorod arrays and their enhanced field emission. (15th August 2017)

• Record Type: Journal Article
• Authors: Su, Xiao-Feng; Chen, Jian-Biao; He, Ru-Mei; Li, Yan; Wang, Jian; Wang, Cheng-Wei
• Is Part Of: Materials science in semiconductor processing. Volume 67(2017)
• Page Start: 55
• Page End: 61
• Publication Date: 2017-08-15
• Subjects: ZnO nanorod arrays -- Oxygen vacancy -- NaBH4 solution reduction -- Field emission; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.05.012
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Vertical and uniform zinc oxide (ZnO) nanorod arrays (NRAs) with sharp tips were fabricated on Zn substrate by a straightforward hydrothermal method without the assistance of seed layer, template or surfactant. Whereafter, the as-synthesized ZnO NRAs were successfully doped with oxygen vacancies by sodium borohydride (NaBH4 ) solution reduction, aiming to generate donor energy levels below the conduction band. More importantly, the doped concentration of oxygen vacancies could be effectively controlled by adjusting the reduction temperature, and we have ultimately achieved the purpose of controllable tailoring the energy band structure of ZnO NRAs. As with design, the oxygen-deficient ZnO NRAs present a lower turn-on field of 0.67 V/μm, higher field enhancement factor of 64601 and better field emission stability. Such excellent FE performance of the as-prepared emitter should originate from the optimization of geometry, the efficient electron transport, as well as the decreased work function.